Invention Grant
- Patent Title: Vacuum cavity-insulated flow sensors
- Patent Title (中): 真空腔绝缘流量传感器
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Application No.: US13607352Application Date: 2012-09-07
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Publication No.: US09212940B2Publication Date: 2015-12-15
- Inventor: Xiang Zheng Tu
- Applicant: Xiang Zheng Tu
- Agency: JW Law Group
- Agent James M Wu
- Main IPC: G01F1/68
- IPC: G01F1/68 ; G01F1/688 ; G01F1/684 ; G01F1/692

Abstract:
A vacuum-cavity-insulated flow sensor and related fabrication method are described. The sensor comprises a porous silicon wall with numerous vacuum-pores which is created in a silicon substrate, a porous silicon membrane with numerous vacuum-pores which is surrounded and supported by the porous silicon wall, and a cavity with a vacuum-space which is disposed beneath the porous silicon membrane and surrounded by the porous silicon wall. The fabrication method includes porous silicon formation and silicon polishing in HF solution.
Public/Granted literature
- US20140069185A1 Vacuum-Cavity-Insulated Flow Sensors Public/Granted day:2014-03-13
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