发明授权
US09214280B2 Very thin dielectrics for high permittivity and very low leakage capacitors and energy storing devices
有权
用于高电容率的非常薄的电介质和非常低的漏电电容器和能量存储装置
- 专利标题： Very thin dielectrics for high permittivity and very low leakage capacitors and energy storing devices
- 专利标题（中）： 用于高电容率的非常薄的电介质和非常低的漏电电容器和能量存储装置
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申请号： US14490873申请日： 2014-09-19
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公开(公告)号： US09214280B2公开(公告)日： 2015-12-15
- 发明人: David R. Carver , Robert G. Carver
- 申请人： Carver Scientific, Inc.
- 申请人地址： US LA Baton Rouge
- 专利权人： Carver Scientific, Inc.
- 当前专利权人： Carver Scientific, Inc.
- 当前专利权人地址： US LA Baton Rouge
- 代理机构： Klarquist Sparkman, LLP
- 主分类号： H01G4/14
- IPC分类号： H01G4/14 ; H01G13/00 ; H01G4/20 ; H01G4/06
摘要：
Methods are disclosed for creating extremely high permittivity dielectric materials for use in capacitors and energy storage devices. High permittivity materials suspended in an organic non-conductive media matrix with enhanced properties and methods for making the same are disclosed. Organic polymers, shellac, silicone oil, and/or zein formulations are utilized to produce thin film low conductivity dielectric coatings. Transition metal salts as salt or oxide matrices are formed at low temperatures utilizing mild reducing agents.
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