Invention Grant
- Patent Title: Semiconductor devices including air gap spacers
- Patent Title (中): 包括气隙间隔物的半导体器件
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Application No.: US14290620Application Date: 2014-05-29
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Publication No.: US09214382B2Publication Date: 2015-12-15
- Inventor: Eun-Ok Lee , Nam-Gun Kim , Gyuhwan Oh , Heesook Park , Hyun-Jung Lee , Kyungho Jang
- Applicant: Eun-Ok Lee , Nam-Gun Kim , Gyuhwan Oh , Heesook Park , Hyun-Jung Lee , Kyungho Jang
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2013-0104386 20130830
- Main IPC: H01L21/764
- IPC: H01L21/764 ; H01L27/108
Abstract:
A spacer covering a sidewall of a contact plug includes a relatively more damaged first portion and a relatively less damaged second portion. An interface of the first and second portions of the spacer is spaced apart from a metal silicide layer of the contact plug. Thus reliability of the semiconductor device may be improved. Related fabrication methods are also described.
Public/Granted literature
- US20150061134A1 SEMICONDUCTOR DEVICES INCLUDING AIR GAP SPACERS AND METHODS OF MANUFACTURING THE SAME Public/Granted day:2015-03-05
Information query
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