发明授权
US09214423B2 Method of forming a HEMT semiconductor device and structure therefor
有权
形成HEMT半导体器件的方法及其结构
- 专利标题： Method of forming a HEMT semiconductor device and structure therefor
- 专利标题（中）： 形成HEMT半导体器件的方法及其结构
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申请号： US14174500申请日： 2014-02-06
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公开(公告)号： US09214423B2公开(公告)日： 2015-12-15
- 发明人: Ali Salih , Chun-Li Liu , Gordon M. Grivna
- 申请人： Semiconductor Components Industries, LLC
- 申请人地址： US AZ Phoeniz
- 专利权人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人： SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- 当前专利权人地址： US AZ Phoeniz
- 代理商 Robert F. Hightower
- 主分类号： H01L29/49
- IPC分类号： H01L29/49 ; H01L23/498 ; H01L29/66 ; H01L29/778 ; H01L21/768 ; H01L21/78 ; H01L23/482 ; H01L29/20 ; H01L21/683 ; H01L23/00
摘要：
In one embodiment, a method of forming a HEMT device may include plating a conductor or a plurality of conductors onto an insulator that overlies a plurality of current carrying electrodes of the HEMT device. The method may also include attaching a connector onto the conductor or attaching a plurality of connectors onto the plurality of conductors.
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