Invention Grant
- Patent Title: Explosion-protected semiconductor module
- Patent Title (中): 防爆半导体模块
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Application No.: US14499737Application Date: 2014-09-29
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Publication No.: US09214432B2Publication Date: 2015-12-15
- Inventor: Guido Boenig , Olaf Hohlfeld
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Murphy, Bilak & Homiller, PLLC
- Priority: DE102013219783 20130930
- Main IPC: H01L23/00
- IPC: H01L23/00 ; H01L23/24 ; H01L23/053 ; H01L23/16
Abstract:
A semiconductor module has a carrier, a semiconductor chip mounted on the carrier, a bond wire, a module housing, and a first sound absorber. The module housing has a housing side wall. The bond wire is arranged in the module housing. At least a section of the first sound absorber is arranged between the semiconductor chip and the housing side wall.
Public/Granted literature
- US20150091148A1 Explosion-Protected Semiconductor Module Public/Granted day:2015-04-02
Information query
IPC分类:
