Invention Grant
US09214485B2 Thick multilayer interference filter having a lower metal layer located within an interconnect region
有权
厚多层干涉滤光器，其具有位于互连区域内的较低金属层
- Patent Title: Thick multilayer interference filter having a lower metal layer located within an interconnect region
- Patent Title (中): 厚多层干涉滤光器，其具有位于互连区域内的较低金属层
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Application No.: US14452702Application Date: 2014-08-06
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Publication No.: US09214485B2Publication Date: 2015-12-15
- Inventor: Laurent Frey , Michel Marty
- Applicant: STMicroelectronics SA , Commissariat A L'Energie Atomique et aux Energies Alternatives
- Applicant Address: FR Montrouge FR Paris
- Assignee: STMicroelectronics SA,Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee: STMicroelectronics SA,Commissariat a l'Energie Atomique et aux Energies Alternatives
- Current Assignee Address: FR Montrouge FR Paris
- Agency: Gardere Wynne Sewell LLP
- Priority: FR1357901 20130808
- Main IPC: H01L27/146
- IPC: H01L27/146 ; G02B5/28
Abstract:
A multilayer optical filter is provided for an integrated circuit including a substrate and a metallization layer interconnection part. The optical filter is formed from a first filter part located within the interconnection part and positioned over a photosensitive region of the substrate. The optical filter further includes a second filter part positioned above the first filter part and the interconnection part. The first and second filter parts each include a metal layer. The first and second filter parts are separated from each other as a function of a wavelength in vacuum of an optical signal to be filtered and received by the photosensitive region.
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