发明授权
- 专利标题： Compact and low loss Y-junction for submicron silicon waveguide
- 专利标题（中）： 亚微米硅波导的紧凑型低损耗Y型结
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申请号： US14093263申请日： 2013-11-29
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公开(公告)号： US09217829B2公开(公告)日： 2015-12-22
- 发明人: Yi Zhang , Shuyu Yang , Tom Baehr-Jones
- 申请人： Yi Zhang , Shuyu Yang , Tom Baehr-Jones
- 申请人地址： US NY New York
- 专利权人： Coriant Advanced Technology, LLC
- 当前专利权人： Coriant Advanced Technology, LLC
- 当前专利权人地址： US NY New York
- 代理机构： Milstein Zhang & Wu LLC
- 代理商 Joseph B. Milstein
- 主分类号： G02B6/26
- IPC分类号： G02B6/26 ; G02B6/42 ; G02B6/28 ; G02B6/125 ; G02B6/122 ; G02B6/12
摘要：
A compact, low-loss and wavelength insensitive Y-junction for submicron silicon waveguides. The design was performed using FDTD and particle swarm optimization (PSO). The device was fabricated in a 248 nm CMOS line. Measured average insertion loss is 0.28±0.02 dB across an 8-inch wafer. The device footprint is less than 1.2 μm×2 μm, orders of magnitude smaller than MMI and directional couplers.
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