Invention Grant
US09218016B2 Voltage reference generation circuit using gate-to-source voltage difference and related method thereof 有权
使用栅极 - 源极电压差的电压基准产生电路及其相关方法

  • Patent Title: Voltage reference generation circuit using gate-to-source voltage difference and related method thereof
  • Patent Title (中): 使用栅极 - 源极电压差的电压基准产生电路及其相关方法
  • Application No.: US13753490
    Application Date: 2013-01-29
  • Publication No.: US09218016B2
    Publication Date: 2015-12-22
  • Inventor: Sheng-Wen Pan
  • Applicant: FSP TECHNOLOGY INC.
  • Applicant Address: TW Taoyuan, Taoyuan County
  • Assignee: FSP TECHNOLOGY INC.
  • Current Assignee: FSP TECHNOLOGY INC.
  • Current Assignee Address: TW Taoyuan, Taoyuan County
  • Agent Winston Hsu; Scott Margo
  • Priority: TW101103038A 20120131
  • Main IPC: G05F1/56
  • IPC: G05F1/56 G05F5/00 G05F1/10 G05F3/24
Voltage reference generation circuit using gate-to-source voltage difference and related method thereof
Abstract:
A voltage reference generation circuit includes a current supply circuit and a core circuit. The current supply circuit is arranged to provide a plurality of currents. The core circuit is coupled to the current supply circuit, and arranged to receive the currents and accordingly generate a voltage reference. The core circuit includes a first transistor, a second transistor and a third transistor, wherein the first transistor and the third transistor generate a first gate-to-source voltage and a third gate-to-source voltage, respectively, according to a first current of the received currents; the second transistor generates a second gate-to-source voltage according to a second current of the received currents; and the voltage reference is generated according to the first gate-to-source voltage, the second gate-to-source voltage and the third gate-to-source voltage.
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