Invention Grant
US09218016B2 Voltage reference generation circuit using gate-to-source voltage difference and related method thereof
有权
使用栅极 - 源极电压差的电压基准产生电路及其相关方法
- Patent Title: Voltage reference generation circuit using gate-to-source voltage difference and related method thereof
- Patent Title (中): 使用栅极 - 源极电压差的电压基准产生电路及其相关方法
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Application No.: US13753490Application Date: 2013-01-29
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Publication No.: US09218016B2Publication Date: 2015-12-22
- Inventor: Sheng-Wen Pan
- Applicant: FSP TECHNOLOGY INC.
- Applicant Address: TW Taoyuan, Taoyuan County
- Assignee: FSP TECHNOLOGY INC.
- Current Assignee: FSP TECHNOLOGY INC.
- Current Assignee Address: TW Taoyuan, Taoyuan County
- Agent Winston Hsu; Scott Margo
- Priority: TW101103038A 20120131
- Main IPC: G05F1/56
- IPC: G05F1/56 ; G05F5/00 ; G05F1/10 ; G05F3/24

Abstract:
A voltage reference generation circuit includes a current supply circuit and a core circuit. The current supply circuit is arranged to provide a plurality of currents. The core circuit is coupled to the current supply circuit, and arranged to receive the currents and accordingly generate a voltage reference. The core circuit includes a first transistor, a second transistor and a third transistor, wherein the first transistor and the third transistor generate a first gate-to-source voltage and a third gate-to-source voltage, respectively, according to a first current of the received currents; the second transistor generates a second gate-to-source voltage according to a second current of the received currents; and the voltage reference is generated according to the first gate-to-source voltage, the second gate-to-source voltage and the third gate-to-source voltage.
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