Invention Grant
US09218159B2 Memory system generating random number and method generating random number
有权
存储系统产生随机数和产生随机数的方法
- Patent Title: Memory system generating random number and method generating random number
- Patent Title (中): 存储系统产生随机数和产生随机数的方法
-
Application No.: US13685743Application Date: 2012-11-27
-
Publication No.: US09218159B2Publication Date: 2015-12-22
- Inventor: Changkyu Seol , Junjin Kong , Hong Rak Son , Pilsang Yoon
- Applicant: Changkyu Seol , Junjin Kong , Hong Rak Son , Pilsang Yoon
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Volentine & Whitt, PLLC
- Priority: KR10-2012-0084064 20120731
- Main IPC: H04L9/08
- IPC: H04L9/08 ; G06F7/58
Abstract:
In a memory of non-volatile memory cells, a random number is generated by programming non-volatile memory cells, reading the programmed non-volatile memory cells using a random number read voltage selected in accordance with a characteristic of the non-volatile memory cells to generate random read data, and generating the random number from the random read data.
Public/Granted literature
- US20140037086A1 MEMORY SYSTEM GENERATING RANDOM NUMBER AND METHOD GENERATING RANDOM NUMBER Public/Granted day:2014-02-06
Information query
