发明授权
- 专利标题： Method of manufacturing semiconductor device, method of processing substrate, substrate processing apparatus and non-transitory computer-readable recording medium
- 专利标题（中）： 半导体装置的制造方法，基板的处理方法，基板处理装置以及非暂时计算机可读记录介质
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申请号： US13847018申请日： 2013-03-19
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公开(公告)号： US09218959B2公开(公告)日： 2015-12-22
- 发明人: Satoshi Shimamoto , Yugo Orihashi , Yoshitomo Hashimoto , Yoshiro Hirose
- 申请人： Hitachi Kokusai Electric Inc.
- 申请人地址： JP Tokyo
- 专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人： HITACHI KOKUSAI ELECTRIC INC.
- 当前专利权人地址： JP Tokyo
- 代理机构： Volpe and Koenig, P.C.
- 优先权： JP2012-064466 20120321; JP2013-025016 20130212
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/02
摘要：
An object of the present invention is to form a good thin film while suppressing generation of foreign substances in a low temperature region. Provided is a method of manufacturing a semiconductor device, including: (a) forming a thin film containing at least a predetermined element and carbon on a substrate by performing a cycle a predetermined number of times, the cycle including: supplying a source gas containing the predetermined element and a halogen element to the substrate in a process container; and supplying an amine-based gas to the substrate in the process container; and (b) modifying byproducts adhered to an inside of the process container by supplying a nitriding gas into the process container after forming the thin film.
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