Invention Grant
US09218961B2 Methods of forming a metal containing layer on a substrate with high uniformity and good profile control
有权
在基材上形成含金属层的方法，其具有高均匀性和良好的轮廓控制
- Patent Title: Methods of forming a metal containing layer on a substrate with high uniformity and good profile control
- Patent Title (中): 在基材上形成含金属层的方法，其具有高均匀性和良好的轮廓控制
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Application No.: US13622769Application Date: 2012-09-19
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Publication No.: US09218961B2Publication Date: 2015-12-22
- Inventor: Zhenbin Ge , Alan Ritchie , Adolph Miller Allen
- Applicant: Zhenbin Ge , Alan Ritchie , Adolph Miller Allen
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Patterson & Sheridan, LLP
- Main IPC: C23C14/24
- IPC: C23C14/24 ; H01L21/02 ; C23C14/58 ; C23C14/54 ; H01L21/285 ; H01L21/768 ; C23C14/14 ; C23C14/34
Abstract:
Methods for forming a metal containing layer onto a substrate with good deposition profile control and film uniformity across the substrate are provided. In one embodiment, a method of sputter depositing a metal containing layer on the substrate includes transferring a substrate in a processing chamber, supplying a gas mixture including at least Ne gas into the processing chamber, applying a RF power to form a plasma from the gas mixture, and depositing a metal containing layer onto the substrate in the presence of the plasma.
Public/Granted literature
- US20130075246A1 METHODS OF FORMING A METAL CONTAINING LAYER ON A SUBSTRATE WITH HIGH UNIFORMITY AND GOOD PROFILE CONTROL Public/Granted day:2013-03-28
Information query
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