Integrated circuits and methods for fabricating integrated circuits are provided. In accordance with an exemplary embodiment, an integrated circuit includes a semiconductor substrate with a fin structure overlying the semiconductor substrate and having a source region, a drain region, and a channel region between the source region and drain region. The source region and the drain region each have a recessed surface. A source contact is adjacent the recessed surface in the source region and a drain contact is adjacent the recessed surface in the drain region. Linear current paths are defined from the channel region to the source contact and from the channel region to the drain contact.