Invention Grant
US09219133B2 Method of making a semiconductor device using spacers for source/drain confinement
有权
制造用于源极/漏极限制的间隔物的半导体器件的方法
- Patent Title: Method of making a semiconductor device using spacers for source/drain confinement
- Patent Title (中): 制造用于源极/漏极限制的间隔物的半导体器件的方法
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Application No.: US13905586Application Date: 2013-05-30
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Publication No.: US09219133B2Publication Date: 2015-12-22
- Inventor: Nicolas Loubet , Pierre Morin
- Applicant: STMICROELECTRONICS, INC.
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L21/02 ; H01L29/06
Abstract:
A method of making a semiconductor device includes forming a first spacer for at least one gate stack on a first semiconductor material layer, and forming a respective second spacer for each of source and drain regions adjacent the at least one gate. Each second spacer has a pair of opposing sidewalls and an end wall coupled thereto. The method includes filling the source and drain regions with a second semiconductor material while the first and second spacers provide confinement.
Public/Granted literature
- US20140357040A1 METHOD OF MAKING A SEMICONDUCTOR DEVICE USING SPACERS FOR SOURCE/DRAIN CONFINEMENT Public/Granted day:2014-12-04
Information query
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