A semiconductor device includes a semiconductor substrate having an element region and a termination region. The element region includes a first body region having a first conductivity type, a first drift region having a second conductivity type, and first floating regions having the first conductivity type. The termination region includes FLR regions, a second drift region and second floating regions. The FLR regions have the first conductivity type and surrounds the element region. The second drift region has the second conductivity type, makes contact with and surrounds the FLR regions. The second floating regions have the first conductivity type and is surrounded by the second drift region. The second floating regions surround the element region. At least one of the second floating regions is placed at an element region side relative to the closest one of the FLR regions to the element region.