发明授权
- 专利标题: Edge-emitting semiconductor laser element
- 专利标题(中): 边缘发射半导体激光元件
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申请号: US14003549申请日: 2012-02-29
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公开(公告)号: US09219348B2公开(公告)日: 2015-12-22
- 发明人: Akiyoshi Watanabe , Kazuyoshi Hirose , Kousuke Shibata , Takahiro Sugiyama , Yoshitaka Kurosaka , Susumu Noda
- 申请人: Akiyoshi Watanabe , Kazuyoshi Hirose , Kousuke Shibata , Takahiro Sugiyama , Yoshitaka Kurosaka , Susumu Noda
- 申请人地址: JP Kyoto-shi, Kyoto JP Hamamatsu-shi, Shizuoka
- 专利权人: Kyoto University,HAMAMATSU PHOTONICS K.K.
- 当前专利权人: Kyoto University,HAMAMATSU PHOTONICS K.K.
- 当前专利权人地址: JP Kyoto-shi, Kyoto JP Hamamatsu-shi, Shizuoka
- 代理机构: Drinker Biddle & Reath LLP
- 优先权: JPP2011-050688 20110308
- 国际申请: PCT/JP2012/055118 WO 20120229
- 国际公布: WO2012/121083 WO 20120913
- 主分类号: H01S5/00
- IPC分类号: H01S5/00 ; H01S5/12 ; H01S5/10 ; H01S5/22
摘要:
The present edge-emitting semiconductor layer element includes two-dimensional photonic crystals 4 formed in a semiconductor layer, and when one direction of a contact region of an electrode 8 is provided as a length direction (X-direction) and a direction perpendicular to both of the length direction and a thickness direction of a substrate is provided as a width direction (Y-direction), the two-dimensional photonic crystals 4 are, when viewed from a direction (Z-axis) perpendicular to the substrate, located in a region containing the electrode contact region and wider in the width direction than the contact region, and have a refractive index periodic structure in which the refractive index satisfies a Bragg's diffraction condition while periodically changing at every interval along the one direction (X-axis).
公开/授权文献
- US20140036947A1 EDGE-EMITTING SEMICONDUCTOR LASER ELEMENT 公开/授权日:2014-02-06