Invention Grant
US09222164B2 Process for forming a chromium diffusion portion and articles made therefrom
有权
用于形成铬扩散部分的方法和由其制成的制品
- Patent Title: Process for forming a chromium diffusion portion and articles made therefrom
- Patent Title (中): 用于形成铬扩散部分的方法和由其制成的制品
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Application No.: US13226126Application Date: 2011-09-06
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Publication No.: US09222164B2Publication Date: 2015-12-29
- Inventor: David Andrew Helmick , Dennis William Cavanaugh , Ganjiang Feng , David Vincent Bucci
- Applicant: David Andrew Helmick , Dennis William Cavanaugh , Ganjiang Feng , David Vincent Bucci
- Applicant Address: US NY Schenectady
- Assignee: General Electric Company
- Current Assignee: General Electric Company
- Current Assignee Address: US NY Schenectady
- Agent Ernest G. Cusick; Frank A. Landgraff
- Main IPC: C23C10/26
- IPC: C23C10/26

Abstract:
In one embodiment, a method for forming an article with a diffusion portion comprises: forming a slurry comprising chromium and silicon, applying the slurry to the article, and heating the article to a sufficient temperature and for a sufficient period of time to diffuse chromium and silicon into the article and form a diffusion portion comprising silicon and a microstructure comprising α-chromium. In one embodiment, a gas turbine component comprises: a superalloy and a diffusion portion having a depth of less than or equal to 60 μm measured from the superalloy surface into the gas turbine component. The diffusion portion has a diffusion surface having a microstructure comprising greater than or equal to 40% by volume α-chromium.
Public/Granted literature
- US20110318601A1 PROCESS FOR FORMING A CHROMIUM DIFFUSION PORTION AND ARTICLES MADE THEREFROM Public/Granted day:2011-12-29
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