Invention Grant
- Patent Title: Near field transducers including nitride materials
- Patent Title (中): 近场换能器包括氮化物材料
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Application No.: US13795634Application Date: 2013-03-12
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Publication No.: US09224416B2Publication Date: 2015-12-29
- Inventor: Tong Zhao , Sarbeswar Sahoo , Michael Christopher Kautzky , Amit Vasant Itagi
- Applicant: SEAGATE TECHNOLOGY LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Mueting, Raasch & Gebhardt, P.A.
- Main IPC: G11B11/00
- IPC: G11B11/00 ; G11B13/08 ; G11B13/04 ; G11B5/31 ; G11B5/60 ; G11B5/48 ; G11B5/00

Abstract:
An apparatus that includes a near field transducer, the near field transducer including an electrically conductive nitride.
Public/Granted literature
- US20130279315A1 NEAR FIELD TRANSDUCERS INCLUDING NITRIDE MATERIALS Public/Granted day:2013-10-24
Information query
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