Invention Grant
US09224437B2 Gated-feedback sense amplifier for single-ended local bit-line memories
有权
用于单端本地位线存储器的门控反馈读出放大器
- Patent Title: Gated-feedback sense amplifier for single-ended local bit-line memories
- Patent Title (中): 用于单端本地位线存储器的门控反馈读出放大器
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Application No.: US14068653Application Date: 2013-10-31
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Publication No.: US09224437B2Publication Date: 2015-12-29
- Inventor: John E. Barth, Jr. , Abraham Mathews , Donald W. Plass , Kenneth J. Reyer
- Applicant: GLOBALFOUNDRIES Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Roberts Mlotkowski, Safran & Cole PC
- Agent Catherine Ivers; Andrew M. Calderon
- Main IPC: G11C7/06
- IPC: G11C7/06 ; G11C11/4091 ; G11C7/10 ; G11C7/12 ; G11C11/4094

Abstract:
A single-ended input sense amplifier uses a pass device to couple the input local bit-line to a global bit-line evaluation node. The sense amplifier also includes a pair of cross-coupled inverters, a first inverter of which has an input that coupled directly to the global bit-line evaluation node. The output of the second inverter is selectively coupled to the global bit-line evaluation node in response to a control signal, so that when the pass device is active, the local bit line charges or discharges the global bit-line evaluation node without being affected substantially by a state of the output of the second inverter. When the control signal is in the other state, the cross-coupled inverter forms a latch. An internal output control circuit of the second inverter interrupts the feedback provided by the second inverter in response to the control signal.
Public/Granted literature
- US20150117120A1 GATED-FEEDBACK SENSE AMPLIFIER FOR SINGLE-ENDED LOCAL BIT-LINE MEMORIES Public/Granted day:2015-04-30
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