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US09224447B2 General structure for computational random access memory (CRAM) 有权
计算随机存取存储器(CRAM)的一般结构

General structure for computational random access memory (CRAM)
摘要:
A cell array includes a logic connection line, a plurality of bit selection lines, and a plurality of cells. Each cell includes a memory element connected to a respective bit selection line and a logic switching element that selectively connects the memory element to the logic connection line. When logic switching elements of multiple separate cells connect their respective memory elements to the logic connection line, the memory elements connected to the logic connection line operate as a logic device with an output of the logic device stored in one of the memory elements.
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