发明授权
- 专利标题: Zinc oxide sintered compact tablet and manufacturing method thereof
- 专利标题(中): 氧化锌烧结片及其制造方法
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申请号: US13699139申请日: 2011-05-18
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公开(公告)号: US09224513B2公开(公告)日: 2015-12-29
- 发明人: Kentaro Sogabe
- 申请人: Kentaro Sogabe
- 申请人地址: JP Tokyo
- 专利权人: SUMITOMO METAL MINING CO., LTD.
- 当前专利权人: SUMITOMO METAL MINING CO., LTD.
- 当前专利权人地址: JP Tokyo
- 代理机构: Katten Muchin Rosenman LLP
- 优先权: JP2010-117845 20100521
- 国际申请: PCT/JP2011/061461 WO 20110518
- 国际公布: WO2011/145665 WO 20111124
- 主分类号: H01B1/08
- IPC分类号: H01B1/08 ; C04B35/453 ; C23C14/24 ; C04B35/626 ; C23C14/08 ; C01G9/02 ; B82Y30/00
摘要:
Provided is a zinc oxide sintered compact tablet enabling a transparent conductive film having no pinholes defects to be stably obtained during vacuum deposition film formation by suppressing the occurrence of the splashing phenomenon. A zinc oxide sintered compact tablet having hexagonal crystal structure, wherein when the integrated intensity of surface (103) and surface (110) found through X-ray diffraction analysis using CuKα radiation is taken to be I(103) and I(110) respectively, the orientation of the uniaxially pressed surface that is expressed by I(103)/(I(103)+I(110)) is 0.48 or more is obtained by performing pressurized formation of a granulated powder composed of a zinc oxide powder or a powder mixture of zinc oxide and an added element as a dopant and having a percentage of donut shaped secondary particles of 50% or more, sintering at normal pressure and a temperature of 800° C. to 1300° C., and further performing reduction treatment by maintaining the normal pressure sintered compact in a vacuum at a pressure of 1×10−3 Pa or more and at a temperature of 800° C. to 1300° C. for no less than 1 minute and no longer than 10 minutes.
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