发明授权
- 专利标题： Method of fabricating semiconductor device isolation structure
- 专利标题（中）： 制造半导体器件隔离结构的方法
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申请号： US13336887申请日： 2011-12-23
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公开(公告)号： US09224606B2公开(公告)日： 2015-12-29
- 发明人: Chen-Hua Yu , Chen-Nan Yeh , Chu-Yun Fu , Ding-Yuan Chen
- 申请人： Chen-Hua Yu , Chen-Nan Yeh , Chu-Yun Fu , Ding-Yuan Chen
- 申请人地址： TW Hsin-Chu
- 专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 当前专利权人地址： TW Hsin-Chu
- 代理机构： Slater & Matsil, L.L.P.
- 主分类号： H01L21/76
- IPC分类号： H01L21/76 ; H01L21/265 ; H01L29/66 ; H01L29/78
摘要：
A semiconductor device including reentrant isolation structures and a method for making such a device. A preferred embodiment comprises a substrate of semiconductor material forming at least one isolation structure having a reentrant profile and isolating one or more adjacent operational components. The reentrant profile of the at least one isolation structure is formed of substrate material and is created by ion implantation, preferably using oxygen ions applied at a number of different angles and energy levels. In another embodiment the present invention is a method of forming an isolation structure for a semiconductor device performing at least one oxygen ion implantation.
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