Invention Grant
- Patent Title: Method for fabricating semiconductor package
- Patent Title (中): 制造半导体封装的方法
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Application No.: US14146171Application Date: 2014-01-02
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Publication No.: US09224646B2Publication Date: 2015-12-29
- Inventor: Yan-Heng Chen , Chun-Tang Lin , Chieh-Yuan Chi , Hung-Wen Liu
- Applicant: Siliconware Precision Industries Co., Ltd
- Applicant Address: TW Taichung
- Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee: Siliconware Precision Industries Co., Ltd.
- Current Assignee Address: TW Taichung
- Agency: Mintz Levin Cohn Ferris Glovsky and Popeo, P.C.
- Agent Peter F. Corless; Steven M. Jensen
- Priority: TW102117492A 20130517
- Main IPC: H01L23/522
- IPC: H01L23/522 ; H01L23/495 ; H01L21/56 ; H01L21/60 ; H01L21/768 ; H01L23/00

Abstract:
Disclosed is a method for fabricating a semiconductor package, including providing a package unit having an insulating layer and at least a semiconductor element embedded into the insulating layer, wherein the semiconductor element is exposed from the insulting layer and a plurality of recessed portions formed in the insulating layer; and electrically connecting a redistribution structure to the semiconductor element. The formation of the recessed portions release the stress of the insulating layer and prevent warpage of the insulating layer from taking place.
Public/Granted literature
- US20140342506A1 METHOD FOR FABRICATING SEMICONDUCTOR PACKAGE Public/Granted day:2014-11-20
Information query
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