Invention Grant
- Patent Title: Method for manufacturing a conducting contact on a conducting element
- Patent Title (中): 在导电元件上制造导电接触的方法
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Application No.: US14339630Application Date: 2014-07-24
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Publication No.: US09224708B2Publication Date: 2015-12-29
- Inventor: Jean-Philippe Colonna , Perceval Coudrain
- Applicant: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES , STMICROELECTRONICS SA
- Applicant Address: FR Paris FR Montrouge
- Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,STMICROELECTRONICS S.A.
- Current Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES,STMICROELECTRONICS S.A.
- Current Assignee Address: FR Paris FR Montrouge
- Agency: Oblon, McClelland, Maier & Neustadt, L.L.P.
- Priority: FR1357328 20130725
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/00 ; H01L21/768 ; H01L21/306 ; H01L21/48 ; H01L23/31 ; H01L21/683

Abstract:
The invention relates to a method for producing an interconnection pad on a conducting element comprising an upper face and a side wall; the method being executed from a substrate at least the upper face of which is insulating; the conducting element going through at least an insulating portion of the substrate, the method being characterized in that it comprises the sequence of the following steps: a step of embossing the conducting element, a step of forming, above the upper insulating face of the substrate, a stack of layers comprising at least one electrically conducting layer and one electrically resistive layer, a step of partially removing the electrically resistive layer, a step of electrolytic growth on the portion of the electrically conducting layer so as to form at least one interconnection pad on said conducting element.
Public/Granted literature
- US20150028488A1 METHOD FOR MANUFACTURING A CONDUCTING CONTACT ON A CONDUCTING ELEMENT Public/Granted day:2015-01-29
Information query
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