发明授权
US09224856B2 LDMOS transistors for CMOS technologies and an associated production method
有权
用于CMOS技术的LDMOS晶体管和相关的生产方法
- 专利标题： LDMOS transistors for CMOS technologies and an associated production method
- 专利标题（中）： 用于CMOS技术的LDMOS晶体管和相关的生产方法
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申请号： US13635535申请日： 2011-04-07
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公开(公告)号： US09224856B2公开(公告)日： 2015-12-29
- 发明人: Thomas Uhlig , Lutz Steinbeck
- 申请人： Thomas Uhlig , Lutz Steinbeck
- 申请人地址： DE Erfurt
- 专利权人： X-FAB SEMICONDUCTOR FOUNDRIES AG
- 当前专利权人： X-FAB SEMICONDUCTOR FOUNDRIES AG
- 当前专利权人地址： DE Erfurt
- 代理机构： Hunton & Williams LLP
- 优先权： DE102010014370 20100409
- 国际申请： PCT/IB2011/051505 WO 20110407
- 国际公布： WO2011/125043 WO 20111013
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L21/8238 ; H01L27/092 ; H01L29/06 ; H01L29/66
摘要：
In a semiconductor component or device, a lateral power effect transistor is produced as an LDMOS transistor in such a way that, in combination with a trench isolation region (12) and the heavily doped feed guiding region (28, 28A), an improved potential profile is achieved in the drain drift region (8) of the transistor. For this purpose, in advantageous embodiments, it is possible to use standard implantation processes of CMOS technology, without additional method steps being required.
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