Invention Grant
- Patent Title: Power semiconductor module
- Patent Title (中): 功率半导体模块
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Application No.: US13789030Application Date: 2013-03-07
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Publication No.: US09226430B2Publication Date: 2015-12-29
- Inventor: Kwang Soo Kim , Tae Hyun Kim , Bum Seok Suh , In Wha Jeong , Young Ki Lee
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon
- Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Current Assignee Address: KR Suwon
- Priority: KR10-2012-0155293 20121227
- Main IPC: H05K7/20
- IPC: H05K7/20 ; H01L23/367 ; H01L23/498 ; H01L25/07

Abstract:
There is provided a power semiconductor module in which power semiconductor elements, integration of which may be difficult due to heating, are modularized. The power semiconductor module includes: a heat dissipation substrate electrically connected to a common connection terminal; and a plurality of electronic elements disposed on the heat dissipation substrate, wherein the electronic elements have varying spaces therebetween.
Public/Granted literature
- US20140185242A1 POWER SEMICONDUCTOR MODULE Public/Granted day:2014-07-03
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