Invention Grant
- Patent Title: Biosensing well array by self-alignment and selective etching
- Patent Title (中): 通过自对准和选择性蚀刻生物传感井阵列
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Application No.: US13946782Application Date: 2013-07-19
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Publication No.: US09228974B2Publication Date: 2016-01-05
- Inventor: Yi-Hsien Chang , Wei-Cheng Shen , Shih-Wei Lin , Chun-Ren Cheng
- Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: G01N27/414
- IPC: G01N27/414

Abstract:
The present disclosure provides a biological field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device includes a plurality of microwells having a bio-sensing layer and a number of stacked well portions over a multi-layer interconnect (MLI). A bottom surface area of a well portion is different from a top surface area of a well portion directly below. The microwells are formed by removing a top metal plate on a topmost level of the MLI.
Public/Granted literature
- US20140308752A1 BIOSENSING WELL ARRAY BY SELF-ALIGNMENT AND SELECTIVE ETCHING Public/Granted day:2014-10-16
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