发明授权
- 专利标题： Semiconductor storage device
- 专利标题（中）： 半导体存储设备
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申请号： US13462905申请日： 2012-05-03
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公开(公告)号： US09229863B2公开(公告)日： 2016-01-05
- 发明人: Eiji Yoshihashi , Hirokuni Yano , Shinji Yonezawa
- 申请人： Eiji Yoshihashi , Hirokuni Yano , Shinji Yonezawa
- 申请人地址： JP Tokyo
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Tokyo
- 代理机构： Oblon, McClelland, Maier & Neustadt, L.L.P.
- 优先权： JP2009-288503 20091218
- 主分类号： G06F12/00
- IPC分类号： G06F12/00 ; G06F12/08
摘要：
According to the embodiments, a first storage area and a second storage area specified by a trim request is managed by a first management unit, and the second storage area specified by the trim request is managed by a second management unit. A block in which data of the first management unit are all specified by the trim request from the first or second storage areas and a block in which data of the second management unit are all specified by the trim request from the second storage area are released.
公开/授权文献
- US20120221776A1 SEMICONDUCTOR STORAGE DEVICE 公开/授权日：2012-08-30
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