A method for manufacturing a dynamic random access memory device is provided. The method includes fabricating a dynamic random access memory device having a plurality of memory cells. Each of the memory cells has a refresh characteristic that meets or exceeds a refresh specification provided for a DDR3 SDRAM device or a DDR4 SDRAM device. The method includes testing the dynamic random access memory device. The testing includes determining the refresh characteristic for each of the memory cells, classifying each of the memory cells as a good memory cell or a bad memory cell based upon the refresh characteristic, identifying each of the bad memory cells, and storing an address location for each of the bad memory cells. The method then includes transferring the address location for each of the bad memory cells into an address match table.