Invention Grant
- Patent Title: High-resolution readout of analog memory cells
- Patent Title (中): 高分辨率读出模拟存储单元
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Application No.: US14259317Application Date: 2014-04-23
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Publication No.: US09230672B2Publication Date: 2016-01-05
- Inventor: Ariel Maislos
- Applicant: Apple Inc.
- Applicant Address: US CA Cupertino
- Assignee: Apple Inc.
- Current Assignee: Apple Inc.
- Current Assignee Address: US CA Cupertino
- Agency: Meyertons, Hood, Kivlin, Kowert & Goetzel, P.C.
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/26 ; G11C27/00

Abstract:
A method includes storing data in an analog memory cell by writing an analog value into the memory cell. After storing the data, the data stored in the memory cell is read by discharging electrical current to flow through the memory cell, during a predefined time interval, while applying a variable voltage to a gate of the memory cell. A fraction of the predefined time interval, during which the variable voltage allows the electrical current to flow through the memory cell, is estimated. The stored data is estimated based on the estimated fraction.
Public/Granted literature
- US20140233310A1 High-Resolution Readout of Analog Memory Cells Public/Granted day:2014-08-21
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