Invention Grant
- Patent Title: Non-volatile memory with negative bias
- Patent Title (中): 具有负偏置的非易失性存储器
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Application No.: US14521210Application Date: 2014-10-22
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Publication No.: US09230674B1Publication Date: 2016-01-05
- Inventor: Yanyi Liu Wong , Agustinus Sutandi
- Applicant: Synopsys, Inc.
- Applicant Address: US CA Mountain View
- Assignee: Synopsys, Inc.
- Current Assignee: Synopsys, Inc.
- Current Assignee Address: US CA Mountain View
- Agency: Fenwick & West LLP
- Main IPC: G11C16/04
- IPC: G11C16/04 ; G11C16/26 ; G11C16/24 ; G11C16/10 ; G11C16/12 ; G11C16/30 ; G11C16/08 ; G11C7/18

Abstract:
A memory system with improved power consumption and operation speed. A memory system performs a data read operation in a low power read mode to improve operation speed and reduce power consumption by biasing bit cells in the memory system at a negative voltage. The use of the negative voltage minimizes changing of voltages of the bit cells. Additionally, the memory system performs data read operation in a margin read mode to improve accuracy of the reading by biasing the bit cells at a positive voltage.
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