Invention Grant
- Patent Title: Method of fabricating semiconductor device using photo key
- Patent Title (中): 使用照片键制造半导体器件的方法
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Application No.: US13957572Application Date: 2013-08-02
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Publication No.: US09230808B2Publication Date: 2016-01-05
- Inventor: Je-woo Han , Jun-ho Yoon , Dong-chan Kim , Gyung-jin Min , Jae-hong Park , Yong-moon Jang
- Applicant: SAMSUNG ELECTRONICS CO., LTD.
- Applicant Address: KR Suwon-si, Gyeonggi-do
- Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee: SAMSUNG ELECTRONICS CO., LTD.
- Current Assignee Address: KR Suwon-si, Gyeonggi-do
- Agency: Lee & Morse, P.C.
- Priority: KR10-2012-0086005 20120806
- Main IPC: H01L21/76
- IPC: H01L21/76 ; H01L21/00 ; H01L23/544 ; H01L21/027 ; G03F7/20 ; H01L49/02 ; H01L27/108
Abstract:
A method of fabricating a semiconductor device includes providing a substrate that is divided into a first region on which a pattern layer is formed and a second region on which a photo key is formed. A silicon layer is formed on the first region and second region of the substrate. The silicon layer is patterned to form a hole exposing a photo key portion of the second region on which the photo key is formed. A buried oxide layer is formed to fill the hole exposing the photo key portion. The silicon layer is patterned by using the photo key formed under the buried oxide layer to form a silicon pattern layer.
Public/Granted literature
- US20140038383A1 METHOD OF FABRICATING SEMICONDUCTOR DEVICE USING PHOTO KEY Public/Granted day:2014-02-06
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