Invention Grant
- Patent Title: Methods for depositing fluorine/carbon-free conformal tungsten
- Patent Title (中): 用于沉积氟/无碳保形钨的方法
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Application No.: US14062804Application Date: 2013-10-24
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Publication No.: US09230815B2Publication Date: 2016-01-05
- Inventor: Xinyu Fu , Srinivas Gandikota , Avgerinos V. Gelatos , Atif Noori , Mei Chang , David Thompson , Steve G. Ghanayem
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Appled Materials, Inc.
- Current Assignee: Appled Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Servilla Whitney LLC
- Main IPC: H01L21/285
- IPC: H01L21/285 ; H01L21/28 ; H01L21/02 ; C23C16/455 ; H01L21/768 ; C23C16/14
Abstract:
Provided are atomic layer deposition methods to deposit a tungsten film or tungsten-containing film using a tungsten-containing reactive gas comprising one or more of tungsten pentachloride, a compound with the empirical formula WCl5 or WCl6.
Public/Granted literature
- US20140120723A1 METHODS FOR DEPOSITING FLUORINE/CARBON-FREE CONFORMAL TUNGSTEN Public/Granted day:2014-05-01
Information query
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