Invention Grant
- Patent Title: Integrated test circuit and method for manufacturing an integrated test circuit
- Patent Title (中): 集成测试电路及制造集成测试电路的方法
-
Application No.: US13753636Application Date: 2013-01-30
-
Publication No.: US09230870B2Publication Date: 2016-01-05
- Inventor: Stefan Tegen , Marko Lemke
- Applicant: Infineon Technologies AG
- Applicant Address: DE Neubiberg
- Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee: INFINEON TECHNOLOGIES AG
- Current Assignee Address: DE Neubiberg
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L21/00 ; H01L21/66

Abstract:
An integrated test circuit, including a plurality of test structure elements, wherein each test structure element includes at least a supply line and a test line; a plurality of select transistors, wherein each select transistor is assigned to one corresponding test structure element, and wherein each select transistor includes a first controlled region, a second controlled region, and a control region, wherein the second controlled region of each select transistor is respectively connected to the supply line of the corresponding test structure element, so that each select transistor is unambiguously assigned to the corresponding test structure element; and a plurality of contact pads, connected to respective first controlled regions and control regions of the plurality of select transistors, such that each test structure element of the plurality of test structure elements can be individually addressed by the plurality of contact pads.
Public/Granted literature
- US20140209904A1 INTEGRATED TEST CIRCUIT AND METHOD FOR MANUFACTURING AN INTEGRATED TEST CIRCUIT Public/Granted day:2014-07-31
Information query
IPC分类: