Invention Grant
- Patent Title: Integrated switchable capacitive device
- Patent Title (中): 集成可开关电容器件
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Application No.: US14264227Application Date: 2014-04-29
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Publication No.: US09230907B2Publication Date: 2016-01-05
- Inventor: Pascal Fornara , Christian Rivero
- Applicant: STMicroelectronics (Rousset) SAS
- Applicant Address: FR Rousset
- Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee: STMicroelectronics (Rousset) SAS
- Current Assignee Address: FR Rousset
- Agency: Slater & Matsil, L.L.P.
- Priority: FR1353945 20130430
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L23/522 ; H01L21/768 ; H01G5/16 ; H01L23/64

Abstract:
An integrated circuit includes a substrate. A fixed main capacitor electrode is disposed in a metal layer overlying the substrate. A second main capacitor electrode is disposed in a metal layer and spaced from the fixed main capacitor electrode. A movable capacitor electrode is disposed adjacent the fixed main capacitor electrode. The movable capacitor electrode is switchable between a first configuration in which the movable capacitor electrode and fixed main capacitor electrode are mutually spaced out in such a manner as to form an auxiliary capacitor electrically connected to the main capacitor. In a second configuration, the movable capacitor electrode and the fixed main capacitor electrode are in electrical contact in such a manner as to give a second capacitive value.
Public/Granted literature
- US20140319653A1 Integrated Switchable Capacitive Device Public/Granted day:2014-10-30
Information query
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