Invention Grant
US09231027B2 Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer
有权
具有垂直增强层和界面各向异性自由层的磁性随机存取存储器
- Patent Title: Magnetic random access memory having perpendicular enhancement layer and interfacial anisotropic free layer
- Patent Title (中): 具有垂直增强层和界面各向异性自由层的磁性随机存取存储器
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Application No.: US14198405Application Date: 2014-03-05
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Publication No.: US09231027B2Publication Date: 2016-01-05
- Inventor: Huadong Gan , Yiming Huai , Xiaobin Wang , Yuchen Zhou , Zihui Wang
- Applicant: Avalanche Technology Inc.
- Applicant Address: US CA Fremont
- Assignee: Avalanche Technology, Inc.
- Current Assignee: Avalanche Technology, Inc.
- Current Assignee Address: US CA Fremont
- Agent Bing K. Yen
- Main IPC: H01L27/22
- IPC: H01L27/22 ; H01L43/02 ; H01F10/32 ; G11C11/16 ; H01F41/30 ; H01L29/66 ; H01L43/08 ; H01L43/10 ; H01L23/528 ; B82Y40/00
Abstract:
The present invention is directed to a spin transfer torque (STT) MRAM device having a perpendicular magnetic tunnel junction (MTJ) memory element. The memory element includes a perpendicular MTJ structure in between a non-magnetic seed layer and a non-magnetic cap layer. The MTJ structure comprises a magnetic free layer structure and a magnetic reference layer structure with an insulating tunnel junction layer interposed therebetween, an anti-ferromagnetic coupling layer formed adjacent to the magnetic reference layer structure, and a magnetic fixed layer formed adjacent to the anti-ferromagnetic coupling layer. At least one of the magnetic free and reference layer structures includes a non-magnetic perpendicular enhancement layer, which improves the perpendicular anisotropy of magnetic layers adjacent thereto.
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