Invention Grant
- Patent Title: Methods for fabricating integrated circuits with polycrystalline silicon resistor structures using a replacment gate process flow, and the integrated circuits fabricated thereby
- Patent Title (中): 使用替代栅极工艺流程制造具有多晶硅电阻器结构的集成电路的方法，以及由此制造的集成电路
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Application No.: US13874200Application Date: 2013-04-30
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Publication No.: US09231045B2Publication Date: 2016-01-05
- Inventor: Jan Hoentschel , Stefan Flachowsky , Nicolas Sassiat , Ralf Richter
- Applicant: GLOBALFOUNDRIES, Inc.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee: GLOBALFOUNDRIES, INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L27/06 ; H01L29/66 ; H01L29/49 ; H01L29/78
Abstract:
Integrated circuits and methods for fabricating integrated circuits are provided. In an embodiment, an integrated circuit includes a first transistor structure that includes an etch-stop material layer, a first workfunction material layer disposed over the etch-stop material layer, a second workfunction material layer disposed over the first workfunction material layer, and a metal fill material disposed over the second workfunction material layer. The integrated circuit further includes a second transistor structure that includes a layer of the etch-stop material, a layer of the second workfunction material disposed over the etch-stop material layer, and a layer of the metal fill material disposed over the second workfunction material layer. Still further, the integrated circuit includes a resistor structure that includes a layer of the etch-stop material, a layer of the metal fill material disposed over the etch-stop material layer, and a silicon material layer disposed over the metal fill material layer.
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