Invention Grant
- Patent Title: Double heterojunction group III-nitride structures
- Patent Title (中): 双异质结III族氮化物结构
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Application No.: US14457436Application Date: 2014-08-12
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Publication No.: US09231064B1Publication Date: 2016-01-05
- Inventor: Shahed Reza , Eduardo M. Chumbes , Thomas E. Kazior , Gerhard Sollner
- Applicant: Raytheon Company
- Applicant Address: US MA Waltham
- Assignee: Raytheon Company
- Current Assignee: Raytheon Company
- Current Assignee Address: US MA Waltham
- Agency: Daly, Crowley, Mofford & Durkee, LLP
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/66 ; H01L21/335 ; H01L29/36 ; H01L29/205 ; H01L29/20 ; H01L21/265
Abstract:
A semiconductor structure having: a Group III-N channel layer, a Group III-N top-barrier polarization-generating layer forming a heterojunction with an upper surface of the channel layer; and a Group III-N back-barrier polarization-generating layer forming a heterojunction with a lower surface of the channel layer. The channel layer has disposed therein a predetermined n-type conductive dopant.
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