Invention Grant
- Patent Title: Three dimensional floating gate NAND memory
- Patent Title (中): 三维浮动门NAND存储器
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Application No.: US14264605Application Date: 2014-04-29
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Publication No.: US09231086B2Publication Date: 2016-01-05
- Inventor: Antoine Khoueir , YoungPil Kim , Rodney Virgil Bowman
- Applicant: SEAGATE TECHNOLOGY LLC
- Applicant Address: US CA Cupertino
- Assignee: Seagate Technology LLC
- Current Assignee: Seagate Technology LLC
- Current Assignee Address: US CA Cupertino
- Agency: Mueting, Raasch & Gebhardt, P.A.
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/66 ; H01L29/788 ; H01L29/40 ; H01L29/423
Abstract:
Memory arrays that include a first memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate; and a second memory cell having a channel; a first insulator; a floating gate; a second insulator; and a control gate, wherein the first insulator is positioned between the channel and the floating gate, the second insulator is positioned between the floating gate and the control gate, wherein the first memory cell and the second memory cell are positioned parallel to each other.
Public/Granted literature
- US20150011062A1 THREE DIMENSIONAL FLOATING GATE NAND MEMORY Public/Granted day:2015-01-08
Information query
IPC分类:
