Invention Grant
- Patent Title: Electromagnetic bandgap structure and method for manufacturing electromagnetic bandgap structure
- Patent Title (中): 电磁带隙结构及制造电磁带隙结构的方法
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Application No.: US13932811Application Date: 2013-07-01
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Publication No.: US09231291B2Publication Date: 2016-01-05
- Inventor: Myunghoi Kim , Jin Ho Jo , Jae Hoon Kim
- Applicant: Electronics and Telecommunications Research Institute
- Applicant Address: KR Daejeon
- Assignee: Electronics and Telecommunications Research Institute
- Current Assignee: Electronics and Telecommunications Research Institute
- Current Assignee Address: KR Daejeon
- Agency: William Park & Associates Ltd.
- Priority: KR10-2013-0015784 20130214
- Main IPC: H04B3/28
- IPC: H04B3/28 ; H01P11/00 ; H01P1/20 ; H05K1/02
Abstract:
An electromagnetic bandgap structure is provided, which includes a ground layer; a first power layer facing an upper portion of the ground layer with a dielectric interposed and comprising at least one first patch and at least one first branch; and a second power layer facing an upper portion of the first power layer with a dielectric interposed and comprising at least one second patch and at least one second branch.
Public/Granted literature
- US20140225681A1 ELECTROMAGNETIC BANDGAP STRUCTURE AND METHOD FOR MANUFACTURING ELECTROMAGNETIC BANDGAP STRUCTURE Public/Granted day:2014-08-14
Information query
