Invention Grant
- Patent Title: Radio frequency switching circuit and electronic device
- Patent Title (中): 射频切换电路和电子设备
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Application No.: US14461933Application Date: 2014-08-18
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Publication No.: US09231780B2Publication Date: 2016-01-05
- Inventor: Hyun Jin Yoo , Hyun Hwan Yoo , Yoo Hwan Kim , Jong Myeong Kim , Dae Seok Jang , Yoo Sam Na
- Applicant: SAMSUNG ELECTRO-MECHANICS CO., LTD.
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee: Samsung Electro-Mechanics Co., Ltd.
- Current Assignee Address: KR Suwon-si
- Agency: NSIP Law
- Priority: KR10-2014-0010524 20140128
- Main IPC: H04B1/44
- IPC: H04B1/44 ; H04L12/50 ; H03K17/10 ; H03K17/693 ; H04L12/10 ; H03K17/06

Abstract:
A radio frequency (RF) switching circuit may include: a first switching circuit unit connected between a first signal port for signal transmission and reception and a common connection node connected to an antenna port and operated according to a first gate signal; a second switching circuit unit connected between a second signal port for signal transmission and reception and the common connection node and operated according to a second gate signal; a negative voltage generating unit generating a negative voltage using a voltage of an RF signal from the common connection node; and a gate signal generating unit generating the first and second gate signals using the negative voltage from the negative voltage generating unit and an operating voltage.
Public/Granted literature
- US20150214931A1 RADIO FREQUENCY SWITCHING CIRCUIT AND ELECTRONIC DEVICE Public/Granted day:2015-07-30
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