发明授权
- 专利标题: Lens heating compensation in photolithography
- 专利标题(中): 光刻镜头加热补偿
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申请号: US12857316申请日: 2010-08-16
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公开(公告)号: US09235134B2公开(公告)日: 2016-01-12
- 发明人: Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
- 申请人: Yuan He , Kaveri Jain , Lijing Gou , Zishu Zhang , Anton deVilliers , Michael Hyatt , Jianming Zhou , Scott Light , Dan Millward
- 申请人地址: US ID Boise
- 专利权人: Micron Technology, Inc.
- 当前专利权人: Micron Technology, Inc.
- 当前专利权人地址: US ID Boise
- 代理机构: Schwegman Lundberg & Woessner, P.A.
- 主分类号: G03B27/42
- IPC分类号: G03B27/42 ; G03F7/20
摘要:
Photolithographic apparatus and methods are disclosed. One such apparatus includes an optical path configured to provide a first diffraction pattern in a portion of an optical system and to provide a second diffraction pattern to the portion of the optical system after providing the first diffraction pattern. Meanwhile, one such method includes providing a first diffraction pattern onto a portion of an optical system, wherein a semiconductor article is imaged using the first diffraction pattern. A second diffraction pattern is also provided onto the portion of the optical system, but the second diffraction pattern is not used to image the semiconductor article.
公开/授权文献
- US20120038895A1 LENS HEATING COMPENSATION IN PHOTOLITHOGRAPHY 公开/授权日:2012-02-16