Invention Grant
- Patent Title: Systems and methods to improve the reliability and lifespan of flash memory
- Patent Title (中): 提高闪存可靠性和寿命的系统和方法
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Application No.: US13861691Application Date: 2013-04-12
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Publication No.: US09235468B2Publication Date: 2016-01-12
- Inventor: Yinian Mao
- Applicant: QUALCOMM Incorporated
- Applicant Address: US CA San Diego
- Assignee: QUALCOMM Incorporated
- Current Assignee: QUALCOMM Incorporated
- Current Assignee Address: US CA San Diego
- Agency: Withrow & Terranova, PLLC
- Main IPC: G06F11/10
- IPC: G06F11/10
Abstract:
A method for controlling flash memory includes selecting a new forward error correction (FEC) parameter set that provides more redundancy than a current FEC parameter set. The method also includes coding source information bits, using the new FEC parameter set, during write operations to a first corrupted page in the flash memory. The method further includes mapping the first corrupted page and at least one additional corrupted page in the flash memory to a single logical page with an expected page size.
Public/Granted literature
- US20140310573A1 SYSTEMS AND METHODS TO IMPROVE THE RELIABILITY AND LIFESPAN OF FLASH MEMORY Public/Granted day:2014-10-16
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