Invention Grant
- Patent Title: Semiconductor device and manufacturing method thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US14193597Application Date: 2014-02-28
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Publication No.: US09236400B2Publication Date: 2016-01-12
- Inventor: Shunpei Yamazaki , Yasuyuki Arai , Jun Koyama
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Applicant Address: JP
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP
- Agency: Husch Blackwell LLP
- Priority: JP11-191097 19990706
- Main IPC: H01L27/12
- IPC: H01L27/12 ; H01L29/04 ; H01L29/786 ; G02F1/1345 ; H01L23/552 ; H01L23/60 ; H01L23/00 ; H01L27/146
Abstract:
A p channel TFT of a driving circuit has a single drain structure and its n channel TFT, a GOLD structure or an LDD structure. A pixel TFT has the LDD structure. A pixel electrode disposed in a pixel portion is connected to the pixel TFT through a hole bored in at least a protective insulation film formed of an inorganic insulating material and formed above a gate electrode of the pixel TFT, and in an interlayer insulating film disposed on the insulation film in close contact therewith. These process steps use 6 to 8 photo-masks.
Public/Granted literature
- US20140175444A1 Semiconductor Device and Manufacturing Method Thereof Public/Granted day:2014-06-26
Information query
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