发明授权
- 专利标题： Semiconductor device, manufacturing method thereof, solid-state imaging device, and electronic apparatus
- 专利标题（中）： 半导体器件及其制造方法，固态成像器件和电子设备
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申请号： US13444050申请日： 2012-04-11
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公开(公告)号： US09236412B2公开(公告)日： 2016-01-12
- 发明人: Masaki Okamoto
- 申请人： Masaki Okamoto
- 申请人地址： JP Tokyo
- 专利权人： SONY CORPORATION
- 当前专利权人： SONY CORPORATION
- 当前专利权人地址： JP Tokyo
- 代理机构： Sheridan Ross P.C.
- 优先权： JP2011-093035 20110419
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L27/146 ; H01L21/768
摘要：
A method of manufacturing a semiconductor device includes bonding a first semiconductor wafer including a first substrate and a first insulating layer formed to contact one surface of the first substrate, and a second semiconductor wafer including a second substrate and a second insulating layer, forming a third insulating layer, performing etching so that the second insulating layer remains on a second wiring layer, forming a first connection hole, forming an insulating film on the first connection hole, performing etching of the second insulating layer and the insulating film, forming a second connection hole, and forming a first via formed in inner portions of the connection holes and connected to the second wiring layer, wherein a diameter of the first connection hole formed on the other surface of the first substrate is greater than a diameter of the first connection hole formed on the third insulating layer.
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