Invention Grant
- Patent Title: Compressive strained III-V complementary metal oxide semiconductor (CMOS) device
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Application No.: US14027563Application Date: 2013-09-16
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Publication No.: US09236463B2Publication Date: 2016-01-12
- Inventor: Thomas N. Adam , Kangguo Cheng , Bruce B. Doris , Pouya Hashemi , Ali Khakifirooz , Alexander Reznicek
- Applicant: GLOBALFOUNDRIES INC.
- Applicant Address: KY Grand Cayman
- Assignee: GLOBALFOUNDRIES INC.
- Current Assignee: GLOBALFOUNDRIES INC.
- Current Assignee Address: KY Grand Cayman
- Agency: Scully, Scott, Murphy & Presser, P.C.
- Main IPC: H01L29/778
- IPC: H01L29/778 ; H01L29/423 ; H01L29/66 ; H01L21/8252 ; H01L21/8258 ; H01L21/84 ; H01L27/06 ; H01L27/12 ; H01L29/10 ; H01L29/205 ; H01L29/20 ; H01L29/51
Abstract:
A semiconductor device including a first lattice dimension III-V semiconductor layer present on a semiconductor substrate, and a second lattice dimension III-V semiconductor layer that present on the first lattice dimension III-V semiconductor layer, wherein the second lattice dimension III-V semiconductor layer has a greater lattice dimension than the first lattice dimension III-V semiconductor layer, and the second lattice dimension III-V semiconductor layer has a compressive strain present therein. A gate structure is present on a channel portion of the second lattice dimension III-V semiconductor layer, wherein the channel portion of second lattice dimension III-V semiconductor layer has the compressive strain. A source region and a drain region are present on opposing sides of the channel portion of the second lattice dimension III-V semiconductor layer.
Public/Granted literature
- US20140191287A1 COMPRESSIVE STRAINED III-V COMPLEMENTARY METAL OXIDE SEMICONDUCTOR (CMOS) DEVICE Public/Granted day:2014-07-10
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