Invention Grant
US09236474B2 Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrate
有权
通过衬底的弹性应变弛豫在薄壁SOI结构中形成应变通道的方法
- Patent Title: Method to form strained channel in thin box SOI structures by elastic strain relaxation of the substrate
- Patent Title (中): 通过衬底的弹性应变弛豫在薄壁SOI结构中形成应变通道的方法
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Application No.: US14186342Application Date: 2014-02-21
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Publication No.: US09236474B2Publication Date: 2016-01-12
- Inventor: Pierre Morin
- Applicant: STMicroelectronics, Inc.
- Applicant Address: US TX Coppell
- Assignee: STMICROELECTRONICS, INC.
- Current Assignee: STMICROELECTRONICS, INC.
- Current Assignee Address: US TX Coppell
- Agency: Allen, Dyer, Doppelt, Milbrath & Gilchrist, P.A.
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/66 ; H01L27/12
Abstract:
Methods and structures for forming strained-channel FETs are described. A strain-inducing layer may be formed under stress in a silicon-on-insulator substrate below the insulator. Stress-relief cuts may be formed in the strain-inducing layer to relieve stress in the strain-inducing layer. The relief of stress can impart strain to an adjacent semiconductor layer. Strained-channel, fully-depleted SOI FETs and strained-channel finFETs may be formed from the adjacent semiconductor layer. The amount and type of strain may be controlled by etch depths and geometries of the stress-relief cuts and choice of materials for the strain-inducing layer.
Public/Granted literature
- US20150243784A1 METHOD TO FORM STRAINED CHANNEL IN THIN BOX SOI STRUCTURES BY ELASTIC STRAIN RELAXATION OF THE SUBSTRATE Public/Granted day:2015-08-27
Information query
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