Invention Grant
- Patent Title: Method of manufacturing substrate having thin film thereabove, method of manufacturing thin-film-device substrate, thin-film substrate, and thin-film-device substrate
- Patent Title (中): 制造其上具有薄膜的衬底的方法，薄膜器件衬底的制造方法，薄膜衬底和薄膜器件衬底
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Application No.: US14187692Application Date: 2014-02-24
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Publication No.: US09236487B2Publication Date: 2016-01-12
- Inventor: Tomohiko Oda , Takahiro Kawashima
- Applicant: JOLED INC.
- Applicant Address: JP Tokyo
- Assignee: JOLED INC.
- Current Assignee: JOLED INC.
- Current Assignee Address: JP Tokyo
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: WOPCT/JP2011/004841 20110830; JP2011-204263 20110920; JP2011-204264 20110920
- Main IPC: H01L21/20
- IPC: H01L21/20 ; H01L21/36 ; H01L29/786 ; H01L21/02 ; H01L21/324 ; H01L21/268 ; H01L27/12
Abstract:
A method of manufacturing a substrate having a thin film thereabove includes: forming a thin film above the substrate; and crystallizing at least a predetermined area of the silicon thin film into a crystallized area through relative scan of the silicon thin film which is performed while the thin film is being irradiated with a continuous wave light beam, wherein in the crystallizing, a projection of the light beam on the thin film has a major axis in a direction crossing a direction of the relative scan, and the formed crystallized area includes a strip-shaped first area extending in the direction crossing the direction of the relative scan and a second area adjacent to the strip-shaped first area, the strip-shaped first area including crystal grains having an average grain size larger than that of crystal grains in the second area.
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