发明授权
- 专利标题： Thin film transistor and method for producing same
- 专利标题（中）： 薄膜晶体管及其制造方法
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申请号： US14422002申请日： 2012-08-23
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公开(公告)号： US09236488B2公开(公告)日： 2016-01-12
- 发明人: Toshio Kawahara , Kazumasa Okamoto , Kazuhiko Matsumoto , Risa Utsunomiya , Teruaki Matsuba , Hitoshi Matsumoto
- 申请人： Toshio Kawahara , Kazumasa Okamoto , Kazuhiko Matsumoto , Risa Utsunomiya , Teruaki Matsuba , Hitoshi Matsumoto
- 申请人地址： JP Aichi JP Hokkaido JP Osaka JP Kyoto
- 专利权人： CHUBU UNIVERSITY EDUCATIONAL FOUNDATION,NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY,OSAKA UNIVERSITY,NISSIN ELECTRIC CO., LTD.
- 当前专利权人： CHUBU UNIVERSITY EDUCATIONAL FOUNDATION,NATIONAL UNIVERSITY CORPORATION HOKKAIDO UNIVERSITY,OSAKA UNIVERSITY,NISSIN ELECTRIC CO., LTD.
- 当前专利权人地址： JP Aichi JP Hokkaido JP Osaka JP Kyoto
- 代理机构： Jianq Chyun IP Office
- 国际申请： PCT/JP2012/071297 WO 20120823
- 国际公布： WO2014/030239 WO 20140227
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L29/786 ; H01L29/66 ; H01L29/778 ; H01L29/16 ; H01L29/10
摘要：
A thin film transistor is equipped with a silicon substrate, a channel layer, a source electrode and a drain electrode. The channel layer, the source electrode and the drain electrode are arranged on the main surface of the silicon substrate. The channel layer is composed of multiple carbon nanowall thin films, wherein the multiple carbon nanowall thin films are arranged in parallel to each other between the source electrode and the drain electrode, one end of each of the multiple carbon nanowall thin films is in contact with the source electrode, and the other end of each of the multiple carbon nanowall thin films is in contact with the drain electrode. An insulating film and a gate electrode are arranged on the rear surface side of the silicon substrate.
公开/授权文献
- US20150221779A1 THIN FILM TRANSISTOR AND METHOD FOR PRODUCING SAME 公开/授权日：2015-08-06
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