Invention Grant
US09236493B2 P-type transparent oxide semiconductor, transistor having the same, and manufacture method of the same
有权
P型透明氧化物半导体，具有该P型透明氧化物半导体的晶体管及其制造方法
- Patent Title: P-type transparent oxide semiconductor, transistor having the same, and manufacture method of the same
- Patent Title (中): P型透明氧化物半导体，具有该P型透明氧化物半导体的晶体管及其制造方法
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Application No.: US13659226Application Date: 2012-10-24
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Publication No.: US09236493B2Publication Date: 2016-01-12
- Inventor: Young-Jei Oh , Chil-Hyoung Lee , Won-Kook Choi , Jeon-Kook Lee , Young-Soo No
- Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Applicant Address: KR Seoul
- Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY
- Current Assignee Address: KR Seoul
- Agency: Ladas & Parry LLP
- Priority: KR10-2012-0052679 20120517
- Main IPC: H01L29/10
- IPC: H01L29/10 ; H01L29/786 ; H01L29/66
Abstract:
A p-type transparent oxide semiconductor includes tin oxide compounds represented by below chemical formula 1: Sn1-xMxO2 [Chemical Formula 1] wherein, in the chemical formula 1, the M is tri-valent metal and the X is a real number of 0.01˜0.05. The p-type transparent oxide semiconductor is applicable to active semiconductor devices such as TFT-LCD and transparent solar cell, due to excellent electrical and optical properties and shows superior properties in aspects of visible light transmittance (T), carrier mobility (μ) and rectification ratio as well as transparency.
Public/Granted literature
- US20150380499A9 P-TYPE TRANSPARENT OXIDE SEMICONDUCTOR, TRANSISTOR HAVING THE SAME, AND MANUFACTURE METHOD OF THE SAME Public/Granted day:2015-12-31
Information query
IPC分类:
