Invention Grant
US09239502B2 Pixel structure with data line, scan line and gate electrode formed on the same layer and manufacturing method thereof
有权
具有数据线,扫描线和栅电极的像素结构形成在同一层上及其制造方法
- Patent Title: Pixel structure with data line, scan line and gate electrode formed on the same layer and manufacturing method thereof
- Patent Title (中): 具有数据线,扫描线和栅电极的像素结构形成在同一层上及其制造方法
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Application No.: US13541757Application Date: 2012-07-04
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Publication No.: US09239502B2Publication Date: 2016-01-19
- Inventor: Te-Chun Huang , Hsiang-Lin Lin , Kuo-Yu Huang
- Applicant: Te-Chun Huang , Hsiang-Lin Lin , Kuo-Yu Huang
- Applicant Address: TW Hsinchu
- Assignee: Au Optronics Corporation
- Current Assignee: Au Optronics Corporation
- Current Assignee Address: TW Hsinchu
- Agency: Jianq Chyun IP Office
- Priority: TW100148582A 20111223
- Main IPC: G02F1/1343
- IPC: G02F1/1343 ; G02F1/1345 ; G02F1/1333 ; H01L27/12 ; G02F1/1362 ; G02F1/136

Abstract:
A pixel structure and a manufacturing method thereof are provided. The pixel structure includes a substrate, a scan line, a data line, a first insulating layer, an active device, a second insulating layer, a common electrode and a first pixel electrode. The data line crossed to the scan line is disposed on the substrate and includes a linear transmitting part and a cross-line transmitting part. The first insulating layer covering the scan line and the linear transmitting part is disposed between the scan line and the cross-line transmitting part. The active device, including a gate, an oxide channel, a source and a drain, is connected to the scan line and the data line. The second insulating layer is disposed on the oxide channel and the linear transmitting part. The common electrode is disposed above the linear transmitting part. The first pixel electrode is connected to the drain.
Public/Granted literature
- US20130161604A1 PIXEL STRUCTURE AND MANUFACTURING METHOD THEREOF Public/Granted day:2013-06-27
Information query
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